Технічний опис APT1003RSLLG MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 1000V 4A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V.
Інші пропозиції APT1003RSLLG
| Фото | Назва | Виробник | Інформація |
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APT1003RSLLG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 1000V 4A D3PAKPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V |
товару немає в наявності |