Технічний опис APT1201R5BVFRG Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A, Drain-source voltage: 1.2kV, Drain current: 10A, Case: TO247-3, On-state resistance: 1.5Ω, Pulsed drain current: 40A, Power dissipation: 370W, Technology: POWER MOS 5®, Gate-source voltage: ±30V, Kind of package: tube, Mounting: THT, Type of transistor: N-MOSFET, Kind of channel: enhancement, Polarisation: unipolar, Gate charge: 285nC.
Інші пропозиції APT1201R5BVFRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
APT1201R5BVFRG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Drain-source voltage: 1.2kV Drain current: 10A Case: TO247-3 On-state resistance: 1.5Ω Pulsed drain current: 40A Power dissipation: 370W Technology: POWER MOS 5® Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 285nC |
товару немає в наявності |