Технічний опис APT1201R5BVRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3, Drain-source voltage: 1.2kV, Drain current: 10A, Case: TO247-3, On-state resistance: 1.5Ω, Technology: POWER MOS 5®, Kind of package: tube, Mounting: THT, Type of transistor: N-MOSFET, Kind of channel: enhancement, Polarisation: unipolar, Gate charge: 28nC.
Інші пропозиції APT1201R5BVRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APT1201R5BVRG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; TO247-3 Drain-source voltage: 1.2kV Drain current: 10A Case: TO247-3 On-state resistance: 1.5Ω Technology: POWER MOS 5® Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 28nC |
товару немає в наявності |