Технічний опис APT12067LFLLG Microchip Technology
Description: MOSFET N-CH 1200V 18A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Part Status: Active, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V.
Інші пропозиції APT12067LFLLG
| Фото | Назва | Виробник | Інформація |
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APT12067LFLLG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 1200V 18A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Part Status: Active Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V |
товару немає в наявності |
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| APT12067LFLLG | Виробник : Microsemi |
MOSFET Power FREDFET - MOS7 |
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APT12067LFLLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 18A; Idm: 72A; 565W; TO264 Drain-source voltage: 1.2kV Drain current: 18A Case: TO264 On-state resistance: 670mΩ Pulsed drain current: 72A Power dissipation: 565W Technology: POWER MOS 7® Gate-source voltage: ±30V Kind of package: tube Mounting: THT Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Gate charge: 150nC |
товару немає в наявності |