Технічний опис APT19M120J Microchip Technology
Description: MOSFET N-CH 1200V 19A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V, Power Dissipation (Max): 545W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V.
Інші пропозиції APT19M120J
| Фото | Назва | Виробник | Інформація |
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| APT19M120J | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 530mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT19M120J | Виробник : Microchip Technology |
Description: MOSFET N-CH 1200V 19A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 14A, 10V Power Dissipation (Max): 545W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V |
товар відсутній |
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| APT19M120J | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 12A; ISOTOP; screw; Idm: 104A Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 104A Power dissipation: 545W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 530mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |