Технічний опис APT30M36JFLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W, Mechanical mounting: screw, Gate-source voltage: ±30V, Pulsed drain current: 304A, Case: ISOTOP, Semiconductor structure: single transistor, Drain-source voltage: 300V, Drain current: 76A, On-state resistance: 36mΩ, Power dissipation: 463W, Polarisation: unipolar, Electrical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT30M36JFLL
| Фото | Назва | Виробник | Інформація |
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| APT30M36JFLL | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 304A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT30M36JFLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 300V 76A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Part Status: Active Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V |
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| APT30M36JFLL | Виробник : Microchip Technology |
MOSFET FG, FREDFET, 300V, 0.036_OHM, SOT-227 |
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| APT30M36JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 304A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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