APT40GP90J Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MODULE 900V 68A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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Технічний опис APT40GP90J Microchip Technology
Description: IGBT MODULE 900V 68A 284W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Інші пропозиції APT40GP90J
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT40GP90J | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B; tube Technology: POWER MOS 7®; PT Type of semiconductor module: IGBT Case: SOT227B Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Kind of package: tube Gate-emitter voltage: ±20V Collector current: 32A Pulsed collector current: 160A Max. off-state voltage: 900V |
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