Технічний опис APT4F120S Microchip Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 175W; D3PAK, Mounting: SMD, Technology: POWER MOS 8®, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Pulsed drain current: 15A, Drain current: 3A, Gate charge: 43nC, Power dissipation: 175W, On-state resistance: 4.2Ω, Gate-source voltage: ±30V, Case: D3PAK, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції APT4F120S
| Фото | Назва | Виробник | Інформація |
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APT4F120S | Виробник : MICROCHIP TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 175W; D3PAK Mounting: SMD Technology: POWER MOS 8® Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Pulsed drain current: 15A Drain current: 3A Gate charge: 43nC Power dissipation: 175W On-state resistance: 4.2Ω Gate-source voltage: ±30V Case: D3PAK Kind of package: tube Kind of channel: enhancement |
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