APT5024BLLG Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V
Power Dissipation (Max): 265W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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Технічний опис APT5024BLLG Microchip Technology
Description: MOSFET N-CH 500V 22A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V, Power Dissipation (Max): 265W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
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| Фото | Назва | Виробник | Інформація |
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APT5024BLLG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 500 V 24 Ohm TO-247 |
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APT5024BLLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
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