Технічний опис APT6010B2FLLG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX, Type of transistor: N-MOSFET, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 54A, Pulsed drain current: 216A, Power dissipation: 690W, Case: TO247MAX, Gate-source voltage: ±30V, On-state resistance: 0.1Ω, Mounting: THT, Gate charge: 150nC, Kind of package: tube, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції APT6010B2FLLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT6010B2FLLG | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
||
 |
APT6010B2FLLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 54A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
товару немає в наявності |
|
 |
APT6010B2FLLG | Виробник : Microchip Technology |
MOSFETs FREDFET MOS7 600 V 10 Ohm TO-247 MAX |
товару немає в наявності |
|
| APT6010B2FLLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 54A; Idm: 216A; 690W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 54A Pulsed drain current: 216A Power dissipation: 690W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |