Технічний опис APT6010JLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 47A, Pulsed drain current: 188A, Power dissipation: 520W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.1Ω, Kind of package: tube, Kind of channel: enhancement, Type of module: MOSFET transistor, Electrical mounting: screw, Mechanical mounting: screw, Semiconductor structure: single transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT6010JLL
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| APT6010JLL | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of package: tube Kind of channel: enhancement Type of module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor кількість в упаковці: 1 шт |
товару немає в наявності |
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APT6010JLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 47A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V |
товару немає в наявності |
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| APT6010JLL | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 600 V 10 Ohm SOT-227 |
товару немає в наявності |
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| APT6010JLL | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 47A; ISOTOP; screw; Idm: 188A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of package: tube Kind of channel: enhancement Type of module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
товару немає в наявності |