APT77N60SC6/TR Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 600V 77A D3PAK
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1030.84 грн |
| 100+ | 857.06 грн |
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Технічний опис APT77N60SC6/TR Microchip Technology
Description: MOSFET N-CH 600V 77A D3PAK, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V, Power Dissipation (Max): 481W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.96mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Інші пропозиції APT77N60SC6/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT77N60SC6/TR | Виробник : Microchip Technology |
MOSFET COOLMOS 600 V 77 A TO-268 Tape & Reel |
товар відсутній |
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APT77N60SC6/TR | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 77A D3PAK Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 2.96mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V |
товар відсутній |