APT9M100B Microsemi

Description: MOSFET N-CH 1000V 9A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 335W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.