APTC60AM45T1G MICROCHIP TECHNOLOGY

Description: MOSFET 2N-CH 600V 49A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 49A, Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SP1.