Технічний опис APTC60SKM24T1G Microchip Technology
Description: MOSFET N-CH 600V 95A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 5mA, Supplier Device Package: SP1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V.
Інші пропозиції APTC60SKM24T1G
| Фото | Назва | Виробник | Інформація |
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| APTC60SKM24T1G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Case: SP1 кількість в упаковці: 1 шт |
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APTC60SKM24T1G | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
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| APTC60SKM24T1G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC8049 |
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| APTC60SKM24T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP1; Press-in PCB; Idm: 260A Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Case: SP1 |
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