APTC60TDUM35PG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
Case: SP6P
Topology: MOSFET x3 half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 35mΩ
Pulsed drain current: 200A
Power dissipation: 416W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис APTC60TDUM35PG MICROCHIP (MICROSEMI)
Description: MOSFET 6N-CH 600V 72A SP6-P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 72A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V, Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 5.4mA, Supplier Device Package: SP6-P.
Інші пропозиції APTC60TDUM35PG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTC60TDUM35PG | Виробник : Microchip Technology |
Trans MOSFET N-CH 600V 72A 39-Pin Case SP-6P Tube |
товар відсутній |
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APTC60TDUM35PG | Виробник : Microchip Technology |
Description: MOSFET 6N-CH 600V 72A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP6-P |
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| APTC60TDUM35PG | Виробник : Microchip Technology |
Microphones |
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| APTC60TDUM35PG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP6P Topology: MOSFET x3 half-bridge Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
товар відсутній |