APTC80DDA15T3G MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
On-state resistance: 0.15Ω
Pulsed drain current: 110A
Power dissipation: 277W
кількість в упаковці: 1 шт
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Технічний опис APTC80DDA15T3G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Drain current: 21A, Drain-source voltage: 800V, Semiconductor structure: diode/transistor, Case: SP3, Type of module: MOSFET transistor, Technology: SJ-MOSFET, Gate-source voltage: ±30V, Topology: boost chopper x2; NTC thermistor, On-state resistance: 0.15Ω, Pulsed drain current: 110A, Power dissipation: 277W, кількість в упаковці: 1 шт.
Інші пропозиції APTC80DDA15T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC80DDA15T3G | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 800V 28A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP3 |
товару немає в наявності |
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| APTC80DDA15T3G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP3 |
товару немає в наявності |
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| APTC80DDA15T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: diode/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
товару немає в наявності |