APTC80DDA15T3G Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
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Технічний опис APTC80DDA15T3G Microchip Technology
Description: MOSFET 2N-CH 800V 28A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 277W, Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 28A, Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V, Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: SP3.
Інші пропозиції APTC80DDA15T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC80DDA15T3G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP3 |
товару немає в наявності |
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| APTC80DDA15T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A On-state resistance: 0.15Ω Drain current: 21A Gate-source voltage: ±30V Pulsed drain current: 110A Power dissipation: 277W Topology: boost chopper x2; NTC thermistor Drain-source voltage: 800V Technology: SJ-MOSFET Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP3 |
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