APTCV50H60T3G

APTCV50H60T3G Microchip Technology


3367399-aptcv50h60t3g-rev1-pdf.pdf Виробник: Microchip Technology
Power Module 32-Pin Case SP-3 Tube
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Технічний опис APTCV50H60T3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W, Type of module: MOSFET/IGBT transistor, Semiconductor structure: transistor/transistor, Topology: H-bridge; NTC thermistor, Collector current: 50A, Case: SP3, Electrical mounting: Press-in PCB, Power dissipation: 290W, Technology: Field Stop; SJ-MOSFET; Trench, Mechanical mounting: screw, Gate-source voltage: ±20V, On-state resistance: 45mΩ, Pulsed drain current: 130A, Drain current: 38A, Drain-source voltage: 600V, кількість в упаковці: 1 шт.

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APTCV50H60T3G Виробник : MICROCHIP (MICROSEMI) 7399-aptcv50h60t3g-datasheet Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
кількість в упаковці: 1 шт
товар відсутній
APTCV50H60T3G Виробник : Microchip Technology 7399-aptcv50h60t3g-datasheet Description: IGBT MODULE 600V 80A 176W SP3
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APTCV50H60T3G Виробник : Microchip Technology msco_s_a0003943195_1-2275671.pdf IGBT Modules DOR CC3133
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APTCV50H60T3G Виробник : MICROCHIP (MICROSEMI) 7399-aptcv50h60t3g-datasheet Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP3; Press-in PCB; 290W
Type of module: MOSFET/IGBT transistor
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Collector current: 50A
Case: SP3
Electrical mounting: Press-in PCB
Power dissipation: 290W
Technology: Field Stop; SJ-MOSFET; Trench
Mechanical mounting: screw
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Pulsed drain current: 130A
Drain current: 38A
Drain-source voltage: 600V
товар відсутній