APTGLQ200A120T3AG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Topology: IGBT x2; NTC thermistor
Technology: Field Stop; Trench
Case: SP3F
Application: motors
Collector current: 200A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor
Topology: IGBT x2; NTC thermistor
Technology: Field Stop; Trench
Case: SP3F
Application: motors
Collector current: 200A
Pulsed collector current: 600A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 9 шт
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Технічний опис APTGLQ200A120T3AG MICROCHIP (MICROSEMI)
Description: IGBT MOD 1200V 400A 1250W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A, NTC Thermistor: Yes, Supplier Device Package: SP3F, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 400 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V.
Інші пропозиції APTGLQ200A120T3AG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTGLQ200A120T3AG | Виробник : Microchip Technology |
Description: IGBT MOD 1200V 400A 1250W SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A NTC Thermistor: Yes Supplier Device Package: SP3F IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
товар відсутній |
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APTGLQ200A120T3AG | Виробник : Microsemi | IGBT Modules |
товар відсутній |
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APTGLQ200A120T3AG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2,NTC thermistor Topology: IGBT x2; NTC thermistor Technology: Field Stop; Trench Case: SP3F Application: motors Collector current: 200A Pulsed collector current: 600A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
товар відсутній |