Технічний опис APTGLQ300A120G Microchip Technology
Description: IGBT MODULE 1200V 500A 1500W SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 500 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1500 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V.
Інші пропозиції APTGLQ300A120G
| Фото | Назва | Виробник | Інформація |
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| APTGLQ300A120G | Виробник : Microchip Technology |
 Description: IGBT MODULE 1200V 500A 1500W SP6Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 300A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1500 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 17.6 nF @ 25 V |
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APTGLQ300A120G | Виробник : Microsemi |
IGBT Modules |
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| APTGLQ300A120G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 960A Technology: Field Stop; Trench Mechanical mounting: screw Application: motors |
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