APTGT150H120G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: SP6C
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 350A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
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Технічний опис APTGT150H120G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 220A 690W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 220 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 690 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V.
Інші пропозиції APTGT150H120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT150H120G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 220A 690W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V |
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| APTGT150H120G | Виробник : Microchip / Microsemi |
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| APTGT150H120G | Виробник : Microchip Technology |
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| APTGT150H120G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 150A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 350A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |