APTGT200DH60G Microchip Technology

Description: IGBT MODULE 600V 290A 625W SP6, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 625 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 290 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP6, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Asymmetrical Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.