APTGT300DU120G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
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Технічний опис APTGT300DU120G MICROCHIP (MICROSEMI)
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Type of module: IGBT, Semiconductor structure: common emitter; transistor/transistor, Topology: IGBT x2, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SP6C, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 600A, Technology: Field Stop; Trench, Mechanical mounting: screw, кількість в упаковці: 4 шт.
Інші пропозиції APTGT300DU120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT300DU120G | Виробник : Microsemi Power Products Group |
Description: IGBT MOD TRENCH DUAL SOURCE SP6 |
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| APTGT300DU120G | Виробник : Microsemi |
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| APTGT300DU120G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
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| APTGT300DU120G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 300A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |