Технічний опис APTGT30TL601G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: three-level inverter; single-phase, Max. off-state voltage: 0.6kV, Collector current: 30A, Case: SP1, Application: photovoltaics, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Technology: Field Stop; Trench, Mechanical mounting: screw, кількість в упаковці: 18 шт.
Інші пропозиції APTGT30TL601G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT30TL601G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 18 шт |
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| APTGT30TL601G | Виробник : Microsemi Power Products Group |
Description: MOD IGBT 600V 50A SP1 |
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| APTGT30TL601G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP1 |
товар відсутній |
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| APTGT30TL601G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 600V; Ic: 30A; SP1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: three-level inverter; single-phase Max. off-state voltage: 0.6kV Collector current: 30A Case: SP1 Application: photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 60A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |