APTGT400DU120G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: SP6C
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 4 шт
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Технічний опис APTGT400DU120G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 560A 1785W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 560 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1785 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.
Інші пропозиції APTGT400DU120G
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APTGT400DU120G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 560A 1785W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 400A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 560 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1785 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
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| APTGT400DU120G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT400DU120G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
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| APTGT400DU120G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.2kV Collector current: 400A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |