APTGT50DU120TG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Topology: IGBT x2; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: SP4
Electrical mounting: FASTON connectors; soldering
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 12 шт
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Технічний опис APTGT50DU120TG MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1200V 75A 277W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 277 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V.
Інші пропозиції APTGT50DU120TG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT50DU120TG | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 75A 277W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 277 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V |
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| APTGT50DU120TG | Виробник : Microchip / Microsemi |
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| APTGT50DU120TG | Виробник : Microchip Technology |
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| APTGT50DU120TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |