Технічний опис APTGT75A60T1G Microchip / Microsemi
Description: IGBT MODULE 600V 100A 250W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V.
Інші пропозиції APTGT75A60T1G
| Фото | Назва | Виробник | Інформація |
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Ціна |
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APTGT75A60T1G | Виробник : Microchip Technology |
 Trans IGBT Module N-CH 600V 100A 250W 12-Pin Case SP-1 Tube |
товару немає в наявності |
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| APTGT75A60T1G | Виробник : MICROCHIP TECHNOLOGY |
APTGT75A60T1G IGBT modules |
товару немає в наявності |
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APTGT75A60T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
товару немає в наявності |