APTGT75TA120PG Microchip Technology

Description: IGBT MODULE 1200V 100A 350W SP6P, Input Capacitance (Cies) @ Vce: 5.34 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 350 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 100 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP6-P, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.