Технічний опис APTM20DUM04G Microchip Technology
Description: MOSFET 2N-CH 200V 372A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1250W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 372A, Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V, Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V, Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6.
Інші пропозиції APTM20DUM04G
| Фото | Назва | Виробник | Інформація |
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APTM20DUM04G | Виробник : Microchip Technology |
 Description: MOSFET 2N-CH 200V 372A SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 |
товару немає в наявності |
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| APTM20DUM04G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP6C |
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| APTM20DUM04G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Semiconductor module; transistor/transistor,common source Type of semiconductor module: MOSFET transistor Semiconductor structure: common source; transistor/transistor Drain-source voltage: 200V Drain current: 278A Case: SP6C Topology: MOSFET x2 Electrical mounting: FASTON connectors; screw On-state resistance: 5mΩ Pulsed drain current: 1488A Power dissipation: 1.25kW Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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