Технічний опис APTM20HM20FTG MICROCHIP (MICROSEMI)
Description: MOSFET 4N-CH 200V 89A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 357W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 89A, Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V, Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP4.
Інші пропозиції APTM20HM20FTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTM20HM20FTG | Виробник : Microchip Technology |
 Description: MOSFET 4N-CH 200V 89A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
товар відсутній |
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| APTM20HM20FTG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
товар відсутній |