Технічний опис APTM50HM38FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 500V, Drain current: 67A, Case: SP6C, Topology: H-bridge, Electrical mounting: FASTON connectors; screw, On-state resistance: 45mΩ, Pulsed drain current: 360A, Power dissipation: 694W, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTM50HM38FG
| Фото | Назва | Виробник | Інформація |
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| APTM50HM38FG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
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| APTM50HM38FG | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 500V 90A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
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| APTM50HM38FG | Виробник : Microchip Technology |
Discrete Semiconductor Modules CC6004 |
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| APTM50HM38FG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 67A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 500V Drain current: 67A Case: SP6C Topology: H-bridge Electrical mounting: FASTON connectors; screw On-state resistance: 45mΩ Pulsed drain current: 360A Power dissipation: 694W Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
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