Технічний опис APTM50SKM17G MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 500V 180A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Інші пропозиції APTM50SKM17G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
APTM50SKM17G | Виробник : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V |
товару немає в наявності |
||
APTM50SKM17G | Виробник : Microchip Technology |
![]() |
товару немає в наявності |