Технічний опис APTMC120HR11CT3AG Microsemi
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F, Semiconductor structure: common emitter; SiC diode/transistor, Case: SP3F, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, On-state resistance: 98mΩ, Drain current: 20A, Pulsed drain current: 55A, Power dissipation: 125W, Drain-source voltage: 1.2kV, Electrical mounting: Press-in PCB, Technology: Field Stop; SiC; Trench, Topology: IGBT x2; MOSFET half-bridge; NTC thermistor.
Інші пропозиції APTMC120HR11CT3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTMC120HR11CT3AG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Semiconductor structure: common emitter; SiC diode/transistor Case: SP3F Type of semiconductor module: MOSFET transistor Mechanical mounting: screw On-state resistance: 98mΩ Drain current: 20A Pulsed drain current: 55A Power dissipation: 125W Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor |
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