APTMC120HR11CT3AG MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 20A
On-state resistance: 98mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Pulsed drain current: 55A
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис APTMC120HR11CT3AG MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F, Power dissipation: 125W, Case: SP3F, Semiconductor structure: common emitter; SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 20A, On-state resistance: 98mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: Field Stop; SiC; Trench, Topology: IGBT x2; MOSFET half-bridge; NTC thermistor, Pulsed drain current: 55A, кількість в упаковці: 1 шт.
Інші пропозиції APTMC120HR11CT3AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTMC120HR11CT3AG | Виробник : Microsemi | Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
||
| APTMC120HR11CT3AG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Power dissipation: 125W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 20A On-state resistance: 98mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: Field Stop; SiC; Trench Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Pulsed drain current: 55A |
товару немає в наявності |