AR4PKHM3_A/I Vishay General Semiconductor - Diodes Division

Description: DIODE AVALANCHE 800V 1.8A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Avalanche, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.8A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Qualification: AEC-Q101.