ARS5045HB0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 45V 50A ARS
Packaging: Bulk
Package / Case: ARS
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 2700pF @ 4V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: ARS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис ARS5045HB0G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 45V 50A ARS, Packaging: Bulk, Package / Case: ARS, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 2700pF @ 4V, 1MHz, Current - Average Rectified (Io): 50A, Supplier Device Package: ARS, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 A, Current - Reverse Leakage @ Vr: 500 µA @ 45 V.