AS1M025120P ANBON SEMICONDUCTOR (INT'L) LIMITED
Виробник: ANBON SEMICONDUCTOR (INT'L) LIMITEDDescription: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V
на замовлення 124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2157.89 грн |
| 30+ | 1620.82 грн |
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Технічний опис AS1M025120P ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Power Dissipation (Max): 463W (Tc), Vgs(th) (Max) @ Id: 4V @ 15mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V.