AS2M040120P ANBON SEMICONDUCTOR (INT'L) LIMITED

Description: N-CHANNEL SILICON CARBIDE POWER, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V.