AUIRFN7107TR-IR International Rectifier
Виробник: International Rectifier
Description: MOSFET N-CH 75V 14A/75A TDSON0
Vgs (Max): ±20V
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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Технічний опис AUIRFN7107TR-IR International Rectifier
Description: MOSFET N-CH 75V 14A/75A TDSON0, Vgs (Max): ±20V, Supplier Device Package: PG-TDSON-8-10, Vgs(th) (Max) @ Id: 4V @ 100µA, Power Dissipation (Max): 4.4W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V.