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B1D05120E

B1D05120E BASiC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBA50C91F69C0D2&compId=B1D05120E.pdf?ci_sign=64478a07c346e7ecfab5f6b78429d01667cbd607 Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Leakage current: 10µA
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 53W
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Технічний опис B1D05120E BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape, Type of diode: Schottky rectifying, Case: TO252-2, Technology: SiC, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 5A, Semiconductor structure: single diode, Max. forward voltage: 1.78V, Leakage current: 10µA, Max. forward impulse current: 60A, Kind of package: reel; tape, Power dissipation: 53W.