B1D08065F BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape
Type of diode: Schottky rectifying
Case: TO263-2
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 48W
Max. forward impulse current: 60A
Leakage current: 10µA
Technology: SiC
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Max. off-state voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис B1D08065F BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape, Type of diode: Schottky rectifying, Case: TO263-2, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 48W, Max. forward impulse current: 60A, Leakage current: 10µA, Technology: SiC, Max. forward voltage: 1.75V, Load current: 8A, Semiconductor structure: single diode, Max. off-state voltage: 650V, кількість в упаковці: 1 шт.
Інші пропозиції B1D08065F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
B1D08065F | Виробник : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263-2; reel,tape Type of diode: Schottky rectifying Case: TO263-2 Mounting: SMD Kind of package: reel; tape Power dissipation: 48W Max. forward impulse current: 60A Leakage current: 10µA Technology: SiC Max. forward voltage: 1.75V Load current: 8A Semiconductor structure: single diode Max. off-state voltage: 650V |
товар відсутній |