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B1D10065E

B1D10065E BASiC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8BBA59EDDD1580D2&compId=B1D10065E.pdf?ci_sign=983eae92e15cf97eac6060aa4d989adc5ce7a650 Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
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Технічний опис B1D10065E BASiC SEMICONDUCTOR

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape, Type of diode: Schottky rectifying, Case: TO252-2, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Max. forward voltage: 1.75V, Leakage current: 20µA, Max. forward impulse current: 75A, Kind of package: reel; tape, Power dissipation: 50W.