B1D10065KS BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.03 грн |
| 5+ | 127.97 грн |
| 25+ | 113.01 грн |
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Технічний опис B1D10065KS BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA, Case: TO220ISO, Mounting: THT, Kind of package: tube, Leakage current: 20µA, Max. forward voltage: 1.75V, Load current: 10A, Max. forward impulse current: 75A, Power dissipation: 38W, Max. off-state voltage: 650V, Semiconductor structure: single diode, Technology: SiC, Type of diode: Schottky rectifying.