B2D04065D BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
кількість в упаковці: 1 шт
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Технічний опис B2D04065D BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape, Type of diode: Schottky rectifying, Case: DFN5x6, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Max. forward voltage: 1.7V, Leakage current: 10µA, Max. forward impulse current: 32A, Kind of package: reel; tape, Power dissipation: 26W, кількість в упаковці: 1 шт.
Інші пропозиції B2D04065D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| B2D04065D | Виробник : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W |
товару немає в наявності |