B2D04065E1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Mounting: SMD
Max. forward impulse current: 31A
Max. forward voltage: 1.6V
Power dissipation: 39W
Technology: SiC
Max. off-state voltage: 650V
Load current: 4A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Case: TO252-2
Type of diode: Schottky rectifying
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.55 грн |
| 8+ | 55.02 грн |
| 25+ | 49.10 грн |
| 100+ | 43.17 грн |
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Технічний опис B2D04065E1 BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape, Mounting: SMD, Max. forward impulse current: 31A, Max. forward voltage: 1.6V, Power dissipation: 39W, Technology: SiC, Max. off-state voltage: 650V, Load current: 4A, Kind of package: reel; tape, Semiconductor structure: single diode, Leakage current: 20µA, Case: TO252-2, Type of diode: Schottky rectifying.