B2D04065E1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 31A
Power dissipation: 39W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.33 грн |
| 8+ | 54.84 грн |
| 25+ | 48.20 грн |
| 100+ | 43.21 грн |
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Технічний опис B2D04065E1 BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape, Case: TO252-2, Mounting: SMD, Kind of package: reel; tape, Leakage current: 20µA, Max. forward voltage: 1.6V, Load current: 4A, Max. forward impulse current: 31A, Power dissipation: 39W, Max. off-state voltage: 650V, Semiconductor structure: single diode, Technology: SiC, Type of diode: Schottky rectifying.