B2D04065E1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
| Кількість | Ціна |
|---|---|
| 7+ | 65.22 грн |
| 8+ | 54.68 грн |
| 25+ | 47.95 грн |
| 100+ | 42.90 грн |
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Технічний опис B2D04065E1 BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Case: TO252-2, Max. forward voltage: 1.6V, Max. forward impulse current: 31A, Leakage current: 20µA, Kind of package: reel; tape, Power dissipation: 39W.