B2D04065V BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Case: SMB flat
Kind of package: reel; tape
Leakage current: 5µA
Max. forward impulse current: 32A
Power dissipation: 10W
кількість в упаковці: 1 шт
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Технічний опис B2D04065V BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Max. forward voltage: 1.65V, Case: SMB flat, Kind of package: reel; tape, Leakage current: 5µA, Max. forward impulse current: 32A, Power dissipation: 10W, кількість в упаковці: 1 шт.
Інші пропозиції B2D04065V
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| B2D04065V | Виробник : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; SMB flat; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: SMB flat Kind of package: reel; tape Leakage current: 5µA Max. forward impulse current: 32A Power dissipation: 10W |
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