B2D10065K1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Power dissipation: 62W
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Leakage current: 20µA
кількість в упаковці: 1 шт
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Технічний опис B2D10065K1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 10A, Power dissipation: 62W, Semiconductor structure: single diode, Case: TO220-2, Kind of package: tube, Max. forward impulse current: 85A, Max. forward voltage: 1.7V, Leakage current: 20µA, кількість в упаковці: 1 шт.
Інші пропозиції B2D10065K1
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B2D10065K1 | Виробник : BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 62W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Power dissipation: 62W Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward impulse current: 85A Max. forward voltage: 1.7V Leakage current: 20µA |
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