B2D16120HC1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. load current: 16A
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 74W
Technology: SiC
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 301.58 грн |
| 5+ | 251.78 грн |
| 30+ | 223.53 грн |
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Технічний опис B2D16120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA, Type of diode: Schottky rectifying, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 8A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Max. forward voltage: 1.82V, Max. load current: 16A, Max. forward impulse current: 80A, Leakage current: 30µA, Kind of package: tube, Power dissipation: 74W, Technology: SiC.