B2D20065TF BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 20µA
Load current: 10A x2
Power dissipation: 33W
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO3PF
| Кількість | Ціна |
|---|---|
| 2+ | 257.27 грн |
| 5+ | 211.98 грн |
| 30+ | 211.14 грн |
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Технічний опис B2D20065TF BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA, Mounting: THT, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying, Leakage current: 20µA, Load current: 10A x2, Power dissipation: 33W, Max. forward impulse current: 70A, Max. forward voltage: 1.62V, Max. load current: 20A, Max. off-state voltage: 650V, Kind of package: tube, Case: TO3PF.