B2D20065TF BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Case: TO3PF
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 70A
Power dissipation: 33W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.15 грн |
| 5+ | 209.40 грн |
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Технічний опис B2D20065TF BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA, Case: TO3PF, Mounting: THT, Kind of package: tube, Leakage current: 20µA, Max. forward voltage: 1.62V, Load current: 10A x2, Max. load current: 20A, Max. forward impulse current: 70A, Power dissipation: 33W, Max. off-state voltage: 650V, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying.