B2D20120F1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263-2; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Power dissipation: 122W
Semiconductor structure: single diode
Case: TO263-2
Kind of package: reel; tape
Max. forward impulse current: 180A
Max. forward voltage: 1.8V
Leakage current: 33µA
кількість в упаковці: 1 шт
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Технічний опис B2D20120F1 BASiC SEMICONDUCTOR
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263-2; 122W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 20A, Power dissipation: 122W, Semiconductor structure: single diode, Case: TO263-2, Kind of package: reel; tape, Max. forward impulse current: 180A, Max. forward voltage: 1.8V, Leakage current: 33µA, кількість в упаковці: 1 шт.
Інші пропозиції B2D20120F1
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B2D20120F1 | Виробник : BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; TO263-2; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Power dissipation: 122W Semiconductor structure: single diode Case: TO263-2 Kind of package: reel; tape Max. forward impulse current: 180A Max. forward voltage: 1.8V Leakage current: 33µA |
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