B2D20120HC1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 60W
Leakage current: 40µA
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 391.09 грн |
| 5+ | 326.67 грн |
| 30+ | 288.53 грн |
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Технічний опис B2D20120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 10A x2, Semiconductor structure: common cathode; double, Case: TO247-3, Max. forward voltage: 2V, Max. load current: 20A, Max. forward impulse current: 90A, Kind of package: tube, Power dissipation: 60W, Leakage current: 40µA.