B2D20120HC1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 40µA
Max. forward voltage: 2V
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Power dissipation: 60W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 391.96 грн |
| 5+ | 327.40 грн |
| 30+ | 289.18 грн |
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Технічний опис B2D20120HC1 BASiC SEMICONDUCTOR
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W, Case: TO247-3, Mounting: THT, Kind of package: tube, Leakage current: 40µA, Max. forward voltage: 2V, Load current: 10A x2, Max. load current: 20A, Max. forward impulse current: 90A, Power dissipation: 60W, Max. off-state voltage: 1.2kV, Semiconductor structure: common cathode; double, Technology: SiC, Type of diode: Schottky rectifying.